Datasheet Transistor Bd139. BD139 80 ICBO Collector Cutoff Current VCB = 30 V IE = 0 01 μA IEBO Emitter Cutoff Current VEB = 5 V IC = 0 10 μA hFE1 DC Current Gain VCE = 2 V IC = 5 mA 25 hFE2 VCE = 2 V IC = 05 A 25 hFE3 VCE = 2 V IC = 150 mA 40 250 VCE(sat) CollectorEmitter Saturation Voltage I C = 500 mA IB = 50 mA 05 V VBE(on) BaseEmitter On Voltage VCE = 2 V IC = 05 A 1 V.
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BD139 BD140 Complementary low voltage transistor Features Products are preselected in DC current gain Application General purpose Description These epitaxial planar transistors are mounted in the SOT32 plastic package They are designed for audio amplifiers and drivers utilizing complementary or quasicomplementary circuits File Size 152KBPage Count 9.
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Datasheet Description Motorola Inc BD139 100Kb / 4P Plastic Medium Power Silicon NPN Transistor SHENZHEN YONGERJIA INDU BD139 126Kb / 1P TRANSISTOR (NPN) Foshan Blue Rocket Elec BD139 814Kb / 6P Silicon NPN transistor in a TO126F Plastic Package STMicroelectronics BD139 76Kb / 4P NPN SILICON TRANSISTORS First Silicon Co Ltd BD139 369Kb / 4P TRANSISTOR (NPN) ManufacturerDatasheetDescriptionSHENZHEN YONGERJIA INDU126Kb / 1PTRANSISTOR (NPN)Motorola Inc100Kb / 4PPlastic Medium Power Silicon NPN Foshan Blue Rocket Elec814Kb / 6PSilicon NPN transistor in a TO126F STMicroelectronics76Kb / 4PNPN SILICON TRANSISTORS End *BD139 (2) * S BD139 (1)Shortcut BD139 (76) recommended resultMatch Like BD139 (31) BD139G (2) BD139T (1) HBD139 (1).
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